SANTA CLARA, Calif., Dec. 1, 2005 — Intel Corporation today announced plans to build a new 300-millimeter (mm) wafer fabrication facility at its site in Kiryat Gat, Israel. The new factory, designated Fab 28, will extend Intel’s manufacturing leadership by producing leading-edge microprocessors in the second half of 2008 on 45 nanometer (nm) process technology. Construction on the $3.5 billion project, Intel’s second 45nm factory, is set to begin immediately.
‘Intel is committed to widening its lead in advanced semiconductor manufacturing,’ said Paul Otellini, Intel president and CEO. ‘Our manufacturing network is a strategic asset of unmatched scope and scale that gives Intel the ability to provide customers with leading-edge products in high volume. Today’s announcement of a second 45nm high volume factory reaffirms that Intel platforms will contain the most advanced and innovative technology in the world for years to come.’
When completed, Fab 28 will become Intel’s seventh 300mm wafer facility. The structure will include approximately 200,000 square feet of clean room space. Over the next several years the project will create more than 2,000 Intel jobs at the site. The Israeli government is providing financial incentives for the new facility.