LOSTCIRCUITS interviews Jeff Lewis, the VP of Worldwide Marketing at Innovative Silicon, developers of ZRAM.  ZRAM is Zero Capacitance DRAM, essentially a SOI (Silicon On Insulator) device, allowing the removal of capacitors, the insulating effect means the transistor holds it’s charge.  The bottom line is denser memory that goes faster, and the article gives very good basic explanations of the technology behind it, and goes a little bit into AMD’s participation.
“Conventional DRAMs are made of capacitors and transistors where the capacitor stores the data and the transistor opens or closes the passgate for the data to enter the system. Innovative Silicon Inc (ISi) have turned the difficulties of manufacturing this standard memory type on an SOI process into a feature by leaving out the capacitor – and guess what, it still works.”

Here are some more Memory articles from around the web:

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