The transistor feat allows the company to continue delivering record-breaking PC, laptop and server processor speeds, while reducing the amount of electrical leakage from transistors that can hamper chip and PC design, size, power consumption, noise and costs. It also ensures Moore’s Law, a high-tech industry axiom that transistor counts double about every two years, thrives well into the next decade.
Intel’s Transistor Technology Breakthrough
SANTA CLARA, Calif., Jan. 27, 2007 In one of the biggest advancements in fundamental transistor design, Intel Corporation today revealed that it is using two dramatically new materials to build the insulating walls and switching gates of its 45 nanometer (nm) transistors. Hundreds of millions of these microscopic transistors or switches will be inside the next generation Intel® Core™ 2 Duo, Intel Core 2 Quad and Xeon® families of multi-core processors. The company also said it has five early-version products up and running — the first of fifteen 45nm processor products planned from Intel.
The transistor feat allows the company to continue delivering record-breaking PC, laptop and server processor speeds, while reducing the amount of electrical leakage from transistors that can hamper chip and PC design, size, power consumption, noise and costs. It also ensures Moore’s Law, a high-tech industry axiom that transistor counts double about every two years, thrives well into the next decade.
The transistor feat allows the company to continue delivering record-breaking PC, laptop and server processor speeds, while reducing the amount of electrical leakage from transistors that can hamper chip and PC design, size, power consumption, noise and costs. It also ensures Moore’s Law, a high-tech industry axiom that transistor counts double about every two years, thrives well into the next decade.
