“GLOBAL FOUNDRIES used the 2009 Symposium on VLSI Technology in Kyoto, Japan to show off a brand new technique.
It said its chip-making innovation allows the equivalent oxide thickness (EOT) in a high-k metal gate (HKMG) transistor to be scaled down to well beyond the 22nm node, purportedly while maintaining overall performance.
Lost and Foundries showed off an n-MOSFET device with EOT of 0.55nm and a p-MOSFET with EOT of 0.7nm.
GloFo said the achievement proves the fab firm is well on track to introduce HKMG ahead of all other foundries, including its rival TSMC, at the 32nm node, and it proves that the AMD spinoff is diligently chipping away to achieve “leadership position” at 22nm and beyond, it claims.”
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Source: The Inquirer
Global Foundries has been showing off some nice wafers at the Symposium on VLSI Technology, displaying just how low they can go. Their work on high-k metal gate transistors seems to have paid off as they showed of some seriously tiny tech. The sizes they’ve reached have been seen before, Global Foundries trick is to overcome the leakage problem to keep these chips power requirements low. Drop by The Inquirer for a look.