Samsung recently began production on new 20nm MLC NAND flash memory chips with densities of 64Gb (Gigabit) and a toggle DDR 2.0 interface. The chips are not only twice as dense as their previous NAND chips, but Samsung also claims that they are capable of 400Mbps of bandwidth.
This 400Mbps bandwidth is thanks to a new toggle DDR 2.0 interface, which purports to bring a three times performance increase over the 133Mbps of bandwidth provided by the older toggle DDR1 interface with 32Gb NAND chips. Samsung further states that the new 64Gb MLC NAND chip offers close to a 50% increase in productivity versus 20nm 32Gb MLC NAND with a toggle DDR 1.o interface that Samsung began producing in April 2010.
The press release also states that:
"According to IHS iSuppli, the worldwide NAND flash memory market will continue to steadily grow from approximately 11 billion 1 Gigabyte (GB) equivalent unitsin 2010 to 94 billion 1GB equivalent units in 2015 with a CAGR of 54 percent. In addition, shipments of NAND flash memory with 64Gb or higher density are expected to account for approximately 70 percent of total NAND flash memory shipments in 2012, a huge increase from the three percent level in 2010."
The NAND flash market is certainly seeing rapid growth and technological progression, with the proliferation of SSDs from Intel, OCZ, Crucial, and others. As densities of flash memory get higher and manufacturing nodes get smaller, cheaper and more spacious storage will make it’s way to both future mobile devices and solid state drives, which is good news for both consumers and Samsung.