Back in May Intel released an interesting video showing off Tri-Gate technology, which brings a third dimension to transistors. That will allow transitions to happen with much less voltage, reducing power requirements and heat generation and allowing for increases in transistor density. Ivy Bridge was suggested as the likely suspect for Intel to first utilize Tri-Gates and over at SemiAccurate you can see the proof as well as the process. Intel is claiming a 37% performance increase at low voltages or about half the power usage if you keep the same performance. Read on to see the difference between FINFets that will be in the competitions chips and the Intel-only three dimensional transistors.
"Intel is set to become the first company to mass produce non-planar transistors with their upcoming 22nm process. Others are talking about FD-SOI, FINFets, and several related structures, but only Intel is set to produce anything in the near future.
There has been a lot of talk about what Intel is doing, and a lot of incomplete or incorrect information put forward from many different sources. What Intel is making is called Tri-Gate transistors, something that is a radical departure from planar ’2D’ transistors, and distinct from FINFets in a very important way."
Here is some more Tech News from around the web:
- Major breakthrough in cognitive computing @ SemiAccurate
- New Research Cracks AES Keys 3-5x Faster @ Slashdot
- Google Highlights Trouble In Detecting Malware @ Slashdot
- Acer Ultrabook pushing for September launch, says paper @ DigiTimes
- Firefox 7 beta brings major cuts in memory usage @ The Inquirer
- Keep your G6; I’m in it for the P6 @ The Tech Report
- TRENDnet 450Mbps Concurrent Dual Band Wireless N Router (TEW-692GR) Review @ Madshrimps
- DIY Mosquito Repellent Diffuser Refill @ Make:Blog
- Tones Overclock Academy III – Benelux Edition @ Madshrimps
- LinuxCon North America 2011 @ Phoronix