A*STAR Data Storage Institute was in the news two weeks ago with the results of their experiment of doping hard drive storage medium with salt allows a 6 fold increase in storage density thanks to much tighter sputtering of magnetic grains on the platter. They are back in the news with another development in a different kind of storage medium altogether. With Micron partnering in the development they are working on a new type of resistive RAM, which will bring speeds better than you can get with flash and in a non-volatile form. The technology is referred to as spin transfer torque magnetic random access memory or STT-MRAM. Drop by The Register for a look at what they are up to, as well as what the competition is working on to bring us the next generation of NAND.
"NAND suppliers and technology developers are anticipating this by developing follow-on technologies centred around the idea of non-volatile, resistive RAM (RRAM), which is faster to access than flash and has a longer working life. There are a variety of ways of altering the resistance of a memory cell and Micron is entering into a joint research and development agreement with Singapore’s A*STAR Data Storage Institute (DSI) to develop spin transfer torque magnetic random access memory or STT-MRAM."
Here is some more Tech News from around the web:
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- AMD Bulldozer With GCC, Open64, LLVM/Clang Compilers @ Phoronix
- Critical Windows zero-day bug exploited by Duqu @ The Register
- Duracell 5 Hour Mobile Phone and MP3 Portable USB Charger @ kitguru
- The opposite of virtualization: Calxeda’s new quad-core ARM part for cloud servers @ Ars Technica
- Here’s your flying car @ Hack a Day