What is the Point of this Editorial?
Many people were waiting on a true, next generation GPU to be released at this time. While the Hawaii GPU from AMD is a new (and potentially exciting) part, it is not the big jump that many were hoping for. It looks to compete with the GTX TITAN, but it will not leapfrog that part. It will probably end up faster, but by a couple of percentage points. It will not be the big jump we have seen in the past such as going from a GTX 580 or HD 6970 to a GTX 680 or HD 7970.
Until 20 nm HKMG becomes available for production, we are in for a wait. TSMC expects to be able to provide mass quantities of these parts by Q3 2014, but that is not entirely set in stone. My gut feeling here is that TSMC will be pretty close to that timeline and we would expect to see 20 nm GPUs hitting the market in around a year from now. The problem that we are potentially looking at could very well be heat and power constraints holding these designs back. I do not doubt that it will be a nice jump in terms of performance from these next gen parts, but the use of 20 nm bulk will limit the potential of these products from a power consumption standpoint.
The NVIDIA GK110, which powers the GTX Titan and GTX 780, is a huge chip which packs in over 7 billion transistors. Expect to see this (and possibly a refreshed version) be the top end chip for a while.
If GLOBALFOUNDRIES has the ability to economically research, develop, and produce parts on 20 nm FD-SOI, they could be hitting one out of the park. The industry is clamoring for a product that can match the power characteristics of Intel’s 22 nm process. Intel’s Baytrail products are causing much concern for the ARM folks, though it will still be a while before Intel can ingratiate itself into many of the major handheld manufacturers who have longstanding partnerships with companies such as Qualcomm and Samsung. 3D FinFETs from TSMC are still at least 2 years away on 20 nm, not to mention sub-20 nm lines like 16 nm and 14 nm products that have been described by pure-play foundries.
Intel is also very close to production of 14 nm parts towards the end of this year. The 14 nm process is again Tri-Gate based with bulk silicon wafers. Intel claims that it can adequately control power and clockspeed, but I find it telling that the first products to be introduced on 14 nm are BGA only based Broadwell parts. On the desktop there will be a Haswell refresh at 22 nm. This indicates that 14 nm will again be a nice step up in transistor density and low speed power consumption, but for desktop and workstation applications it might not be entirely adequate. Beyond 14 nm Intel is in fact looking at FD-SOI very carefully. In the end, materials are king when it comes to process technology. We have also just learned that Intel is delaying the Broadwell introduction for at least a quarter due to unacceptable defect levels on their 14 nm process with this particular product. Even with billions in R&D and some of the most talented engineers in the industry, Intel still faces many problems with their introduction of advanced process nodes.
For the pure-play foundries they will have to rely on FinFET technology to go below 20 nm. We will see a good mix of bulk and FD-SOI products, though we have no idea who else ST-Micro will license FD-SOI to. The combination of FinFET/FD-SOI holds a lot of promise, but we are still at least three years away from such an implementation.
It was all downhill for process technology after they allowed Allyn into a Fab. He ruins everything.
The long and short of it is that we can expect longer time intervals between releases of next-generation GPU architectures as they are being constrained by the very latest process technology available. 20 nm bulk will be one year from now, 20 nm FD-SOI is at least 1.5 years away, and any process node below that appropriate for GPUs will be another 3 years. AMD and NVIDIA will have to do a lot of work to implement next generation features without breaking transistor budgets. They will have to do more with less, essentially. Either that or we will just have to deal with a much slower introduction of next generation parts. Marketing and product segmentation will rear their ugly heads, and we will see a very slow reduction in prices from when a product is introduced. We have been spoiled for the past 18 years, but it seems like the good times are over and a whole lot of work is ahead of both designers and foundries.
We still have many years ahead of us for product advancement, and that will continue until we start seeing the 7 nm to 5 nm process nodes. After that, we are in for some rough times. Quantum physics will start to derail silicon based chips and we will have to move to more exotic materials to keep pace. This is all assuming that EUV will actually work as intended. If that does not happen, then we will have to look at other potential lithography measures such as x-ray. There are many, many challenges ahead of the process technology people, and until some of these basic problems are solved we will likely never again see the rapid march of technology that we have experienced since the birth of the silicon transistor some 50 years ago.
All the “next-generation
All the “next-generation 14nm” nodes are very similar, they’re basically “20nm” metal (64nm pitch double-patterned) with faster transistors — this applies to Intel “14nm” TriGate, TSMC “16nm” FinFET, GF “14nm” FinFET, ST “14nm” FDSOI Samsung “14nm” FinFET, there probably isn’t a single feature on any of the chips which is 14nm but they had to call them something which was better than 20nm.
TSMC wouldn’t call theirs 14nm because “fourteen” sounds like “go towards death” in Chinese — and STs 14nm FDSOI used to be called 20nm (which was at least honest) until their marketing realised that everyone else was calling their similar processes 14nm, so they renamed it…
They’re all a big advance on standard “20nm” planar (with the same metal stack) because lower leakage and lower operating voltage means lower power.
The issues are the risk and production difficulties and cost with new transistor structures, especially FinFET where Intel certainly had (and have?) issues with process variability, in spite of the fast they can sell both fast/leaky chips and slow/low power ones for more money than typical ones.
For all these processes (and 20nm bulk planar) the cost per gate is similar to or even higher than 28nm HKMG, which removes one of the big drivers for going to the next process node for many products. The industry was expecting EUV to come along and save its bacon, this not only hasn’t happened yet but will certainly miss the next node after these (“10nm”) which will need triple patterning — and good look with that, both for design and cost.
So the lower power and higher density will mean that more functionality can be crammed onto one chip, but also that this will cost more — which is an alien concept to an industry that for the last 40 years has assumed that the next process node will deliver more band for the same buck. Consumers may be in for a nasty shock when they find that their next super iGadget is even more expensive…
Thank goodness for marketing
Thank goodness for marketing and superstition to drive process naming! Thanks for the info. So strange to see these "advanced" nodes with the 20 nm back end. Gonna be an interesting next few years of process tech. Now we wait and see if all that money the industry invested in EUV will ever come to fruition.
came to this site first time,
came to this site first time, very impressive article, great read, thanks for that!! will stop by more often 🙂
” It looks to compete with
” It looks to compete with the GTX TITAN, but it will not leapfrog that part. It will probably end up faster, but by a couple of percentage points. It will not be the big jump we have seen in the past such as going from a GTX 580 or HD 6970 to a GTX 680 or HD 7970.”
Thats not really a fair comparison… you are comparing generational leaps compared to competing products.
The generational leap for the R290x is from the 7970. Similarly the GTX 780 is the generational leap from the GTX 680.
As for for how the R290x compares to the 7970.. it is about 59% faster give or take the application. Thats the biggest leap generation to generation for as long as I can remember.
Well, those really aren’t
Well, those really aren't generational leaps. They are bigger products based on the same GCN and Kepler architectures that were introduced with the HD 7970 and GTX 680 respectively. Titan has been out around a year now, and only now does AMD have an answer for that. All of them are based on 28 nm. So, those big chips are nice jumps in performance, but they are not the big architectural leaps that we have seen from the GTX 580 to GTX 680 or the HD 6970 to the HD 7970.
http://www.cadence.com/Commun
http://www.cadence.com/Community/blogs/ii/archive/2013/04/14/tsmc-2013-symposium-progress-in-20nm-16nm-finfet-and-3d-ic-technologies.aspx
Are theese mostly PR related or people just start assumptions from having a “%30 lower power consumption” on a “sram array” that, it will also be on the same level on 400mm2 GPU? Or both?
Some is a bit of marketing
Some is a bit of marketing hype, but the basics of timelines and products seems to be in line with what is expected. Yes, there will be smaller chips, there will be more power efficient chips, but I think we will see some power/clock scaling issues with 20 nm planar. It will be a better overall process than 28 nm HKMG, but do not expect miracles at the high end with large chips. I could be out in left field, but it seems awfully positive and shiny in that blog.
Great article Josh
Thnx
Great article Josh
Thnx
Thanks!
Thanks!
Wonderful article!
I wish
Wonderful article!
I wish everyone could read this so we would stop hearing all the “wahhh Intel/AMD/Nvidia doesn’t care about enthusiasts anymore” nonsense. Transistors don’t just get smaller on their own.
You rock, Josh — great
You rock, Josh — great piece. A few clarifications. IBM is still using PD-SOI at 22nm in Power8 (see http://bit.ly/15saFUm). They’ve got SOI-FinFET lined up for 14nm. The FD-SOI crowd is skipping directly from 28nm to 14nm, which they say will be ready next year before 14nm (bulk) FinFET (see http://bit.ly/1cGjZgi). (Tho 28nm FDSOI is already pretty awesome in terms of power & perf — it’s what got 3GHz & an extra day of smartphone battery life – see http://bit.ly/1hPLvri). And ST’s capacity in France is much more than you’ve indicated — and now they’re in the process of doubling it (thank you, Europe!) so they’ll be at 4500 wafer starts/week by the end of 2014 (see http://bit.ly/1bdvMfr). Leti will have models available for 10nm FDSOI in a couple months, and PDKs in Q314 (see http://bit.ly/1bdwadP).
Really good info here!
Really good info here! Thanks for joining in!
Thank you for this
Thank you for this comprehensive and complete article on technological limitations of SC industry vs graphics maturity. I work in the ST fab that develop 28 then 14nm FDSOI right now and this kind of article makes it worth the efforts (to not say the hard work!) we put in this technology.
14 nm FDSOI looks very, very
14 nm FDSOI looks very, very interesting. Can't wait to see how it progresses!