STT-MRAM, Spin Transfer Torque Magnetic Random Access Memory, actually uses the spin of an electron to record a 1 or 0 making it quite scalable, though Avalanche's current proof of concept is built on a 55nm process. Avalanche is hoping that their use of the common Serial Peripheral Interface bus and standard CMOS 300mm process will make this type of RAM easier to adopt than some of the other types of non-volatile RAM being developed such as RRAM, NRAM and Toshiba's STT-MRAM. STT-MRAM can be incredibly fast, scale down well below 10nm and will not need multiple layers, which will reduce the heat produced even in extremely high densities. Check out more on how they have designed their version of STT-MRAM over at The Register.
"Startup Avalanche is sampling an STT-RAM chip offering DRAM/SRAM speed, persistent storage, unlimited endurance and scalability beyond 10nm."
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