We occasionally throw around the '3-bit MLC' (Multi Level Cell) term in place of 'TLC' (Triple Level Cell) when talking about flash memory. Those terms are interchangeable, but some feel it is misleading as the former still contains the term MLC. At Toshiba's keynote today, they showed us why the former is important:
Photo source: Sam Chen of Custom PC Review
That's right – QLC (Quadruple Level Cell), which is also 4-bit MLC, has been mentioned by Toshiba. As you can see at the right of that slide, storing four bits in a single flash cell means there are *sixteen* very narrow voltage ranges representing the stored data. That is a very hard thing to do, and even harder to do with high performance (programming/writing would take a relatively long time as the circuitry nudges the voltages to such a precise level). This is why Toshiba pitched this flash as a low cost solution for archival purposes. You wouldn't want to use this type of flash in a device that was written constantly, since the channel materials wearing out would have a much more significant effect on endurance. Suiting this flash to be written only a few times would keep it in a 'newer' state that would be effective for solid state data archiving.
The 1x / 0.5x / 6x figures appearing in the slide are meant to compare relative endurance to Toshiba's own planar 15nm flash. The figures suggest that Toshiba's BiCS 3D flash is efficient enough to go to QLC (4-bit) levels and still maintain a higher margin than their current MLC (2-bit) 2D flash.
More to follow as we continue our Flash Memory Summit coverage!