Good news has arrived for those watching the development of the next type of storage medium, there has been new information about Spin Transfer Torque MRAM published. One of the major hurdles in the development of the new type of memory, apart from yields, has been predicting the performance of MRAM cells. The Register have linked to an article on IEEE, jointly published by IBM and Samsung, which details how new STT-MRAM materials fabbed at the 11nm behave. We are still a while off of STT-MRAM hitting the market but it continues to draw closer as researchers try to bring us the next generation of storage media.
"IBM and Samsung scientists have published an IEEE paper demonstrating switching MRAM cells for 655 devices with diameters ranging from 50 down to 11 nanometers in just 10 nanoseconds using only 7.5 microamperes. They say it is a significant achievement towards the development of Spin Torque MRAM."
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