You have probably recently heard of terahertz radiation used to scan physical objects, be it the T-Rays at airports or the the researchers at MIT who are reading books through the covers.  There is more recent of news on researchers utilizing the spectrum between frequencies of 0.3THz and 3THz, this time pertaining to RAM cycles and the possibility of increasing the speed at which RAM can flip between a 0 and 1.  In theory a terahertz electric field could flip bits 1000 times faster than the electromagnetic process currently used in flash memory. This could also be used in the new prototype RAM technology we have seen, such as MRAM, PRAM or STT-RAM.  This is still a long way off but a rather interesting read, especially if you can follow the links from The Inquirer to the Nature submission.

"Using the prototypical antiferromagnet thulium orthoferrite (TmFeO3), we demonstrate that resonant terahertz pumping of electronic orbital transitions modifies the magnetic anisotropy for ordered Fe3+ spins and triggers large-amplitude coherent spin oscillations," the researchers helpfully explained."

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