Over at Nanotechweb you can read about research being conducted on memristor technology to reduce the power required to write to a cell to make this memory type more useful in low voltage applications, such as IoT devices.  Apart from the challenges of creating materials capable of remembering how much current has flowed through them in the past there is what the researchers refer to as the sneak path problem.  When writing to a memristor, current flows to the cell that is being updated, unfortunately it also flows into a number of other cells thus increasing the current required for each write cycle.  This team hopes to overcome this issue, so far having successfully reduced the current required to 8% of that in conventional crossbar circuits.  Check out more on the research in the full article.

"Researchers at Hewlett Packard Labs in California, the University of Massachusetts Amherst and Seoul National University are reporting on a new low-current, self-rectifying memristor made from titanium ion electron traps in a niobium oxide matrix. The device might be used as an embedded memory on low-power chips and for storing data in Internet of Things (IoT) appliances."

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